深圳市中立信电子科技有限公司

MRF8S21100HSR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV8 2.1GHZ 100W

Designed for W--CDMA and LTE base station applications with frequencies

from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.  MRF8S21100HSR3

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.  MRF8S21100HSR3

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz 17.9 33.0 6.4 --38.7

2140 MHz 18.1 33.0 6.4 --38.2

2170 MHz 18.3 33.4 6.3 --37.2

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW (1)

Output Power (3 dB Input Overdrive from Rated Pout)

• Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW

Features  MRF8S21100HSR3

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 14.