深圳市中立信电子科技有限公司

MRFX1K80HR5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

This MRFX1K80HR5 high ruggedness device is designed for use in high VSWR industrial,

medical, broadcast, aerospace and mobile radio applications. Its unmatched

input and output design supports frequency use from 1.8 to 400 MHz.

1. Measured in 27 MHz reference circuit (page 6).

2. Measured in 87.5–108 MHz broadband reference circuit (page 11).

3. The values shown are the center band performance numbers across the indicated

frequency range.

4. Measured in 230 MHz production test fixture (page 17).

Features MRFX1K80HR5

 Unmatched input and output allowing wide frequency range utilization

 Device can be used single--ended or in a push--pull configuration

 Qualified up to a maximum of 65 VDD operation

 Characterized from 30 to 65 V for extended power range

 High breakdown voltage for enhanced reliability

 Suitable for linear application with appropriate biasing

 Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation

 Lower thermal resistance option in over--molded plastic package: MRFX1K80N

 Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications MRFX1K80HR5

 Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems

 Radio and VHF TV broadcast

 Aerospace

– HF communications

– Radar