深圳市中立信电子科技有限公司

MPC5746R-252DS

射频金属氧化物半导体场效应(RF MOSFET)晶体管 AF7 2.6GHZ NI880X-4L4S

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. MPC5746R-252DS

 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Features MPC5746R-252DS

 Advanced High Performance In--Package Doherty

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems

 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

Refer to the following documents, software and tools to aid your design process.

Application Notes MPC5746R-252DS

 AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

 EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

 Electromigration MTTF Calculator

 RF High Power Model

 .s2p File

Development Tools

 Printed Circuit Boards