深圳市中立信电子科技有限公司

A2T21H360-24SR6

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V

This 63 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 2110 to

2170 MHz.

2100 MHz

Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,

IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Features  A2T21H360-24SR6

· Advanced High Performance In--Package Doherty

· Greater Negative Gate--Source Voltage Range for Improved Class C Operation

· Designed for Digital Predistortion Error Correction Systems

· In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

Application Notes  A2T21H360-24SR6

 AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

 EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software  A2T21H360-24SR6

 Electromigration MTTF Calculator

 RF High Power Model

 .s2p File

Development Tools

 Printed Circuit Boards