深圳市中立信电子科技有限公司

AFT21S230SR3

射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV9 2.1GHZ 230W NI780S-6

RF Power LDMOS Transistors   N--Channel Enhancement--Mode Lateral MOSFETs

These  AFT21S230SR3 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Features  AFT21S230SR3

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems

 Optimized for Doherty Applications

 NI--780S--2L2L, NI--780S--2L4S: R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.

 NI--780S--2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. For R5 Tape and Reel options, see p. 17.

型号: AFT21S230SR3

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

RoHS:  无铅环保  

技术: Si 

封装: Reel 

系列: AFT21S230S  

类型: RF Power MOSFET  

商标: NXP / Freescale  

产品类型: RF MOSFET Transistors  

工厂包装数量: 250  

子类别: MOSFETs  

单位重量: 4.611 g