深圳市中立信电子科技有限公司

AFT05MS031NR1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

AFT05MS031NR1 Designed for mobile two--way radio applications with frequencies from

136 to 520 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

型号: AFT05MS031NR1 

制造商: NXP 

单位重量: 529.550 mg

Features  AFT05MS031NR1

 Characterized for Operation from 136 to 520 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band:

 136--174 MHz

 380--450 MHz

 450--520 MHz

 225C Capable Plastic Package