深圳市中立信电子科技有限公司

AFT18H357-24SR6

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 1805-1995 MHz 63 W AVG. 28 V

This AFT18H357-24SR6  63 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

1800 MHz

 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,

IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Features AFT18H357-24SR6

 Advanced High Performance In--Package Doherty

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems

 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

Application Notes

 AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

 EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

 Electromigration MTTF Calculator

 RF High Power Model

 .s2p File

Development Tools  AFT18H357-24SR6

 Printed Circuit Boards