深圳市中立信电子科技有限公司

AFT05MP075NR1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4

RF Power LDMOS Transistors

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

Features AFT05MP075NR1

 Characterized for Operation from 136 to 520 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

 High Linearity for: TETRA, SSB, LTE

 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

Typical Applications 

 Output Stage VHF Band Mobile Radio

 Output Stage UHF Band Mobile Radio

型号: AFT05MP075NR1 

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

RoHS:  无铅环保  

晶体管极性: N-Channel 

Id-连续漏极电流: 3 A 

Vds-漏源极击穿电压: - 500 mV, 40 V 

技术: Si 

增益: 18.5 dB 

输出功率: 76 W 

工作温度: - 40 ℃ 

工作温度: + 150 ℃

安装风格: SMD/SMT 

封装 / 箱体: TO-270-WB-4 

封装: Cut Tape 

封装: Reel 

工作频率: 136 MHz to 520 MHz  

系列: AFT05MP075N  

类型: RF Power MOSFET  

商标: NXP / Freescale  

正向跨导 - 值: 7.3 S  

通道数量: 2 Channel  

产品类型: RF MOSFET Transistors  

工厂包装数量: 500  

子类别: MOSFETs  

Vgs - 栅极-源极电压: 12 V  

Vgs th-栅源极阈值电压: 2.1 V  

单位重量: 1.635 g