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IS42S16160J-6BLI 动态随机存取存储器
ISSI
348
Memory & Data Storage
122 mg
SDRAM
BGA-54
相关产品
产品信息
IS42S16160J-6BLI
动态随机存取存储器 256M, 3.3V, S动态随机存取存储器, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
OVERVIEW IS42S16160J-6BLI
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.
FEATURES IS42S16160J-6BLI
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 32 ms (A2 grade) or
64 ms (commercial, industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OPTIONS IS42S16160J-6BLI
• Package:
54-pin TSOP-II
54-ball BGA
• Operating Temperature Range: Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)