深圳市中立信电子科技有限公司

IS42S16160J-6BLI

动态随机存取存储器 256M, 3.3V, S动态随机存取存储器, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT

OVERVIEW IS42S16160J-6BLI

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

FEATURES IS42S16160J-6BLI

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Single Power supply: 3.3V + 0.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 8K refresh cycles every 32 ms (A2 grade) or

64 ms (commercial, industrial, A1 grade)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

• Burst termination by burst stop and precharge

command

OPTIONS IS42S16160J-6BLI

• Package:

54-pin TSOP-II

54-ball BGA

• Operating Temperature Range: Commercial (0oC to +70oC)

Industrial (-40oC to +85oC)