深圳市中立信电子科技有限公司

FM24W256-GTR

F-RAM IIC FRAM 256k 3-5V 256-Kbit (32K × 8) Serial (I2C)

Functional Description FM24W256-GTR

The FM24W256 is a 256-Kbit nonvolatile memory employing an  advanced ferroelectric process. A ferroelectric random access  memory or F-RAM is nonvolatile and performs reads and writes  similar to a RAM. It provides reliable data retention for 151 years  while eliminating the complexities, overhead, and system-level  reliability problems caused by EEPROM and other nonvolatile  memories.

Features FM24W256-GTR

■ 256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32K × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (See Data Retention and Endurance

on page 10)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Fast 2-wire Serial interface (I2C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I2C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A active current at 100 kHz

❐ 15 A (typ) standby current

■ Wide voltage operation: VDD = 2.7 V to 5.5 V

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant