深圳市中立信电子科技有限公司

IS43TR16640B-125JBLI-TR

动态随机存取存储器 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT

FEATURES IS43TR16640B-125JBLI

 Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

 Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

 High speed data transfer rates with system

frequency up to 1066 MHz

 8 internal banks for concurrent operation

 8n-bit pre-fetch architecture

 Programmable CAS Latency

 Programmable Additive Latency: 0, CL-1,CL-2

 Programmable CAS WRITE latency (CWL) based

on tCK

 Programmable Burst Length: 4 and 8

 Programmable Burst Sequence: Sequential or

Interleave

 BL switch on the fly

 Auto Self Refresh(ASR)

 Self Refresh Temperature(SRT)

 Refresh Interval: IS43TR16640B-125JBLI

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

 Partial Array Self Refresh

 Asynchronous RESET pin

 TDQS (Termination Data Strobe) supported (x8 only)

 OCD (Off-Chip Driver Impedance Adjustment)

 Dynamic ODT (On-Die Termination)

 Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )

 Write Leveling

 Up to 200 MHz in DLL off mode

OPTIONS IS43TR16640B-125JBLI

 Configuration:

128Mx8

64Mx16

 Package:

96-ball BGA (9mm x 13mm) for x16

78-ball BGA (8mm x 10.5mm) for x8