深圳市中立信电子科技有限公司

CY62136FV30LL-45BVXI

静态随机存取存储器 2Mb 3V 45ns 128K x 16 LP 2-Mbit (128 K × 16) Static RAM

2-Mbit (128 K × 16) Static RAM

Functional Description CY62136FV30LL-45BVXI

The CY62136FV30LL-45BVXI CY62136FV30 is a high performance CMOS static RAM  organized as 128K words by 16 bits. This device features  advanced circuit design to provide ultra low active current. This  is ideal for providing More Battery Life™ (MoBL®) in portable  applications such as cellular telephones. The device also has an  automatic power down feature that significantly reduces power  consumption by 90 percent when addresses are not toggling.  Placing the device into standby mode reduces power  consumption by more than 99 percent when deselected (CE  HIGH). The input and output pins (I/O0 through I/O15) are placed  in a high impedance state when the device is deselected (CE  HIGH), the outputs are disabled (OE HIGH), both Byte High  Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or  during a write operation (CE LOW and WE LOW).

Features CY62136FV30LL-45BVXI

■ Very high speed: 45 ns

■ Temperature ranges

❐ Industrial: –40 °C to +85 °C

❐ Automotive-A: –40 °C to +85 °C

❐ Automotive-E: –40 °C to +125 °C

■ Wide voltage range: 2.20 V to 3.60 V

■ Pin compatible with CY62136V, CY62136CV30/CV33, and

CY62136EV30

■ Ultra low standby power

❐ Typical standby current: 1 A

❐ Maximum standby current: 5 A (Industrial)

■ Ultra low active power

❐ Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)