深圳市中立信电子科技有限公司

IS46TR16128CL-125KBLA2

256Mx8, 128Mx16 2Gb DDR3 SDRAM

动态随机存取存储器 Automotive 2G 1.35V DDR3 128Mx16 1600MTs

FEATURES IS46TR16128CL-125KBLA2

 Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

 Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

 High speed data transfer rates with system

frequency up to 933 MHz

 8 internal banks for concurrent operation

 8n-Bit pre-fetch architecture

 Programmable CAS Latency

 Programmable Additive Latency: 0, CL-1,CL-2

 Programmable CAS WRITE latency (CWL) based

on tCK

 Programmable Burst Length: 4 and 8

 Programmable Burst Sequence: Sequential or

Interleave IS46TR16128CL-125KBLA2

 BL switch on the fly

 Auto Self Refresh(ASR)

 Self Refresh Temperature(SRT)

 Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

 Partial Array Self Refresh

 Asynchronous RESET pin

 TDQS (Termination Data Strobe) supported (x8 only)

 OCD (Off-Chip Driver Impedance Adjustment)

 Dynamic ODT (On-Die Termination)

OPTIONS IS46TR16128CL-125KBLA2

 Configuration:

256Mx8

128Mx16

 Package:

96-ball BGA (9mm x 13mm) for x16

78-ball BGA (8mm x 10.5mm) for x8