深圳市中立信电子科技有限公司

IS42S16400J-6TLI

动态随机存取存储器 64M (4Mx16) 166MHz SDR S动态随机存取存储器, 3.3V

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)  SYNCHRONOUS DYNAMIC RAM

OVERVIEW IS42S16400J-6TLI

ISSI's64MbSynchronousDRAMisorganizedas1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES IS42S16400J-6TLI

• Clock frequency: 200, 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Self refresh modes

• Auto refresh (CBR)

• 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

OPTIONS IS42S16400J-6TLI

• Package:

54-pin TSOP II

54-ball TF-BGA (8mm x 8mm)

60-ball TF-BGA (10.1mm x 6.4mm)

• Operating Temperature Range

Commercial (0oC to +70oC)

Industrial (-40oC to +85oC)

Automotive Grade A1 (-40oC to +85oC)

Automotive Grade A2 (-40oC to +105oC)